Kingston

Kingston ME KSM32RS8 8HDR 8GB 3200MHz DDR4 ECC Reg CL22 DIMM 1Rx8 Hynix D

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SKU:
243434
UPC:
740617308129
MPN:
KSM32RS8/8HDR
Condition:
New
Availability:
Ships within 2 Business Days
Weight:
908 Grams
Width:
8 (cm)
Height:
3 (cm)
Depth:
18 (cm)
Item Shipping Location:
Markham, ON
Item Postal Code:
L3R 4C1
Shipping Policy:
Ships to Canada. Non-Canadian Destionations please contact us for shipping options prior to purchase.
Price and Quantity Last updated:
4/26/2024 11:51:26 AM

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The Quantity listed on category 2,3,4 is most accurate at time and date posted to this product page.

Updates in Category 2,3,4 are not automated and are subject to change without further notice.

For rapid response, Please email the Quantity requested, SKU Code and UPC code to stockcheck@cryptocomputing.ca if you require a manual price and quantity verification prior to ordering.

Price and Quantity subject to verification prior to order acceptance and you will not be charged until verification is completed.

Current Stock Quantity shown for Pre-Order is the allocated backorder quantity provided by our suppliers.

Pre-Order ETA is subject to change without further notice after order confirmation.

Description

DESCRIPTION

Kingston's KSM32RS8/8HDR is a 1G x 72-bit (8GB)
DDR4-3200 CL22 SDRAM (Synchronous DRAM) registered w/
parity, 1Rx8, ECC, memory module, based on nine 1G x 8-bit
FBGA components. The SPD is programmed to JEDEC
standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each
288-pin DIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:


FEATURES

• Power Supply: VDD = 1.2V

• VDDQ = 1.2V

• VPP = 2.5V

• VDDSPD = 2.41V to 2.75V

• Functionality and operations comply with the DDR4 SDRAM datasheet

• 16 internal banks

• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for
the banks in the same or different bank group accesses are available

• Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600

• Bi-Directional Differential Data Strobe

• 8 bit pre-fetch

• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)

• Supports ECC error correction and detection

• On-Die Termination (ODT)

• Temperature sensor with integrated SPD

• This product is in compliance with the RoHS directive.

• Per DRAM Addressability is supported

• Internal Vref DQ level generation is available

• Write CRC is supported at all speed grades

• CA parity (Command/Address Parity) mode is supported

CL(IDD)
22 cycles

Row Cycle Time (tRCmin)
45.75ns(min.)

Refresh to Active/Refresh

Command Time (tRFCmin)
350ns(min.)

Row Active Time (tRASmin)
32ns(min.)

Maximum Operating Power
IDD Specifications
IDD
Symbol 3200 Units
IDD0 787 mA
IDD0A 787 mA
IDD1 893 mA
IDD1A 919 mA
IDD2N 714 mA
IDD2NA 714 mA
IDD2NT 759 mA
IDD2NL 651 mA
IDD2NG 714 mA
IDD2ND 705 mA
IDD2NP 714 mA
IDD2P 478 mA
IDD2Q 669 mA
IDD3N 744 mA
IDD3NA 744 mA
IDD3P 512 mA
IDD4R 1558 mA
IDD4RA 1586 mA
IDD4RB 1575 mA
IDD4W 1544 mA
IDD4WA 1592 mA
IDD4WB 1487 mA
IDD4WC 1537 mA
IDD4WP 1752 mA
IDD5B 2235 mA
IDD5F2 1751 mA
IDD5F4 1600 mA
IDD6N 175 mA
IDD6E 239 mA
IDD6R 115 mA
IDD6A 239 mA
IDD7 1702 mA
IDD8 92 mA
IPP
Symbol 3200 Units
IPP0 36 mA
IPP1 40 mA
IPP2N 21 mA
IPP2P 17 mA
IPP3N 100 mA
IPP3P 98 mA
IPP4R 129 mA
IPP4W 128 mA
IPP5B 489 mA
IPP5F2 324 mA
IPP5F4 265 mA
IPP6N 37 mA
IPP6E 52 mA
IPP6R 25 mA
IPP6A 51 mA
IPP7 142 mA
IPP8 18 mA

UL Rating
94 V - 0

Operating Temperature
0oC to +85oC

Storage Temperature
-55oC to +100oC

Module Assembly
DRAM:
HYNIX (D-DIE)
RCD:
Rambus

Item Dimension (L inchxW inchxH inch)
7 x 3 x 1
Weight
1.00lb
Warranty Information
Lifetime Warranty

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Please Verify the Product Title and Description Match the UPC Code and MPN found next to the word  "Availability." You are ordering the MPN/UPC Code found near the field "Availability" should the Title or Description have a mismatch.

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